SI6968BEDQ_08 Datasheet, PDF (2/11 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection

Si6968BEDQ
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 4.5 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 70 °C
On-State Drain Current^b
I_D(on)
V_DS ≤ 5 V, V_GS = 4.5 V
Drain-Source On-State Resistance^{b R}DS(on)
V_GS = 4.5 V, I_D = 6.5 A
V_GS = 2.5 V, I_D = 5.5 A
Forward Transconductance^b
g_fs
V_DS = 10 V, I_D = 6.5 A
Diode Forward Voltage^b
V_SD
I_S = 1.5 A, V_GS = 0 V
Dynamic^a
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
V_DS = 10 V, V_GS = 4.5 V, I_D = 6.5 A
Gate-Drain Charge
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = 10 V, R_L = 10 Ω
I_D ≅ 1 A, V_GEN = 4.5 V, R_G = 6 Ω
Fall Time
t_f
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Min.
Typ.^a
Max.
Unit
0.6
1.6
V
± 200
nA
1
µA
25
30
A
0.0165 0.022
Ω
0.023 0.030
30
S
0.71
1.2
V
12
18
2.2
nC
3.6
245
365
330
495
ns
860
1300
510
765
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10000
8
1000
100
6
10
T_J = 150 °C
4
1
2
0.1
T_J = 25 °C
0
0
3
6
9
12
15
18
V_GS - Gate-to-Source Voltage (V)
Gate-Current vs. Gate-Source Voltage
0.01
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
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2
Document Number: 72274
S-81221-Rev. C, 02-Jun-08