SI6963DQ-T1 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET

New Product
Si6963DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
2000
Capacitance
0.16
0.12
V_GS = 2.5 V
1600
C_iss
1200
0.08
0.04
V_GS = 4.5 V
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
6
V_DS = 10 V
5
I_D = 3.5 A
4
3
2
1
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
800
C_oss
400
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 3.5 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
I_D = 3.5 A
T_J = 25_C
0.08
0.04
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Document Number: 71812
S-20220—Rev. D, 01-Apr-02
0.00
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
www.vishay.com
3