SI6963DQ-T1 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET

Si6963DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = - 20 V, V_GS = 0 V
V_DS = - 20 V, V_GS = 0 V, T_J = 55_C
V_DS w - 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 3.5 A
V_GS = - 2.5 V, I_D = - 2.7 A
V_DS = - 10 V, I_D = - 3.5 A
I_S = - 1.25 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = - 10 V, V_GS = - 4.5 V, I_D = - 3.5 A
V_DD = - 10 V, R_L = 10 W
I_D ^ - 1 A, V_GEN = - 4.5 V, R_G = 6 W
I_F = - 1.25 A, di/dt = 100 A/ms
Min Typ Max Unit
- 0.6
- 1.4
V
"100
nA
-1
mA
- 25
- 30
A
0.037
0.050
W
0.062
0.085
10
S
- 0.72
- 1.2
V
12.5
20
1.9
nC
3.2
20
30
26
40
48
75
ns
30
45
30
50
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V_GS = 5 thru 3.5 V
24
3V
18
2.5 V
12
6
2V
0
0
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
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2
Transfer Characteristics
30
T_C = - 55_C
24
125_C
18
25_C
12
6
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Document Number: 71812
S-20220—Rev. D, 01-Apr-02