SI6913DQ Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

New Product
Si6913DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
3500
Capacitance
0.08
0.06
0.04
0.02
0.00
0
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
5
10
15
20
25
30
I_D - Drain Current (A)
6
V_DS = 6 V
5
I_D = 5.8 A
Gate Charge
4
3
2
1
3000
2500
C_iss
2000
1500
1000
500
C_rss
C_oss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.60
1.40
V_GS = 4.5 V
I_D = 5.8 A
1.20
1.00
0.80
0
0
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
T_J = 25_C
1
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
0.60
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.08
0.07
0.06
0.05
I_D = 5.8 A
0.04
0.03
0.02
0.01
0.00
012345678
V_GS - Gate-to-Source Voltage (V)
Document Number: 72368
S-31914—Rev. A, 15-Sep-03
www.vishay.com
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