SI6913DQ Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

Si6913DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 400 mA
V_DS = 0 V, V_GS = "8 V
V_DS = - 12 V, V_GS = 0 V
V_DS = -12 V, V_GS = 0 V, T_J = 70_C
V_DS = -5 V, V_GS = -4.5 V
V_GS = -4.5 V, I_D = -5.8 A
V_GS = -2.5 V, I_D = -5.0 A
V_GS = -1.8 V, I_D = -4.4 A
V_DS = -5 V, I_D = -5.8 A
I_S = -1.0 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = -6 V, V_GS = -4.5 V, I_D = -5.8 A
f = 1.0 MHz
V_DD = -6 V, R_L = 6 W
I_D ^ -1 A, V_GEN = -4.5 V, R_G = 6 W
I_F = -1.0 A, di/dt = 100 A/ms
Min Typ Max Unit
- 0.40
- 0.9
V
"100
nA
-1
mA
- 25
- 20
A
0.016
0.021
0.021
0.028
W
0.029
0.037
25
S
- 0.61
- 1.1
V
18.5
28
2.7
nC
5.0
4.6
W
45
70
80
120
130
200
ns
80
120
65
100
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V_GS = 5 thru 2.5 V
30
2V
24
24
18
18
Transfer Characteristics
T_C = -55_C
25_C
125_C
12
12
1.5 V
6
6
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
www.vishay.com
2
0
0.0
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Document Number: 72368
S-31914—Rev. A, 15-Sep-03