SI6880AEDQ_06 Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 1.8-V (G-S) Battery Switch with ESD Protection

New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
0.030
0.024
0.018
0.012
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
5
V_DS = 10 V
4
I_D = 7.2 A
3
2
Si6880AEDQ
Vishay Siliconix
0.006
1
0.000
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
1.6
V_GS = 4.5 V
1.4
I_D = 7.2 A
1.2
0
0
30
10
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
T_J = 150 °C
1.0
T_J = 25 °C
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.060
1
0
0.2
0.4 0.6 0.8
1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.048
0.036
I_D = 7.2 A
0.2
I_D = 250 µA
0.0
0.024
- 0.2
0.012
- 0.4
0.000
0
1
2
3
4
5
6
7
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
- 0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
Document Number: 72313
S-60422-Rev. B, 20-Mar-06
www.vishay.com
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