SI6880AEDQ_06 Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 1.8-V (G-S) Battery Switch with ESD Protection

New Product
Si6880AEDQ
Vishay Siliconix
N-Channel 1.8-V (G-S) Battery Switch, ESD Protection
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.018 at V_GS = 4.5 V
20
0.022 at V_GS = 2.5 V
0.025 at V_GS = 1.8 V
I_D (A)
7.2
6.5
6.0
D1
S_{1 2}
S_{1 3}
G₁ 4
TSSOP-8
Si6880AEDQ
Top View
8D
7 ^S2
6 ^S2
5 G2
Ordering Information: Si6880AEDQ-T1
Si6880AEDQ-T1-E3 (Lead (Pb)-free)
FEATURES
• TrenchFET^® Power MOSFET
• ESD Protected: 3500 V
• Common Drain
APPLICATIONS
• 1-2 Cell Battery Protection Circuitry
D
Pb-free
Available
RoHS*
COMPLIANT
D
* 2.3 kΩ
G₁
* 2.3 kΩ
G₂
S₁
N-Channel
* Typical value by design
S₂
N-Channel
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 sec
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current (10 µs Pulse Width)
T_A = 25 °C
T_A = 70 °C
I_D
7.2
5.8
5.7
4.7
A
I_DM
30
Continuous Source Current (Diode Conduction)^a
I_S
1.5
1.0
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.5
1.0
0.96
0.64
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)^a
Notes:
a. Surface Mounted on FR4 Board.
b. t ≤ 10 sec.
t ≤ 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72313
S-60422-Rev. B, 20-Mar-06
Typical
70
100
55
Maximum
83
120
70
Unit
°C/W
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