SI6467BDQ Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

New Product
Si6467BDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
On-Resistance vs. Drain Current
6000
Capacitance
0.024
0.018
0.012
0.006
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
5000
4000
C_iss
3000
2000
C_oss
1000
C_rss
0.000
0
6
12
18
24
30
I_D - Drain Current (A)
6
V_DS = 6 V
5
I_D = 8 A
Gate Charge
4
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
V_GS = 4.5 V
I_D = 8 A
1.2
3
1.0
2
0.8
1
0
0
12
24
36
48
60
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
10
T_J = 150_C
1
T_J = 25_C
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
0.04
I_D = 8 A
0.03
0.02
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
0.00
0
1
2
3
4
5
6
7
8
V_GS - Gate-to-Source Voltage (V)
Document Number: 72087
S-22382—Rev. A, 30-Dec-02
www.vishay.com
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