SI6467BDQ Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

New Product
P-Channel 1.8-V (G-S) MOSFET
Si6467BDQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.0125 @ V_GS = -4.5 V
-12
0.0155 @ V_GS = -2.5 V
0.020 @ V_GS = -1.8 V
I_D (A)
-8.0
- 7.0
- 6.0
S*
TSSOP-8
D 1_D
S2
Si6467BDQ
S3
G4
Top View
8D
7S
6S
5D
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
- 8.0
-6.5
-1.35
1.5
1.0
-12
"8
-30
-55 to 150
-6.8
-5.4
-0.95
1.05
0.67
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 72087
S-22382—Rev. A, 30-Dec-02
Symbol
R_thJA
R_thJF
Typical
65
100
43
Maximum
83
120
52
Unit
_C/W
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