SI6467BDQ-T1-GE3 Datasheet, PDF (3/11 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
6000
Si6467BDQ
Vishay Siliconix
0.024
0.018
0.012
0.006
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
0.000
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
5000
4000
3000
2000
1000
0
0
C_iss
C_oss
C_rss
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
6
V_DS = 6 V
5
I_D = 8 A
4
3
1.4
V_GS = 4.5 V
I_D = 8 A
1.2
1.0
2
1
0
0
12
24
36
48
60
Q_g - Total Gate Charge (nC)
Gate Charge
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
30
10
T_J = 150 °C
1
T_J = 25 °C
0.06
0.05
0.04
I_D = 8 A
0.03
0.02
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
1
2
3
4
5
6
7
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72087
S-80682-Rev. D, 31-Mar-08
www.vishay.com
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