SI6467BDQ-T1-GE3 Datasheet, PDF (1/11 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

P-Channel 1.8-V (G-S) MOSFET
Si6467BDQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0125 at V_GS = - 4.5 V
- 12
0.0155 at V_GS = - 2.5 V
0.020 at V_GS = - 1.8 V
I_D (A)
- 8.0
- 7.0
- 6.0
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFETs
Pb-free
Available
RoHS*
COMPLIANT
S*
D1
S2
S3
G4
TSSOP-8
Si6467BDQ
Top View
8D
7S
6S
5D
Ordering Information: Si6467BDQ-T1
Si6467BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 12
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current (10 µs Pulse Width)
T_A = 25 °C
T_A = 70 °C
I_D
- 8.0
- 6.5
- 6.8
- 5.4
A
I_DM
- 30
Continuous Source Current (Diode Conduction)^a
I_S
- 1.35
- 0.95
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.5
1.05
1.0
0.67
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72087
S-80682-Rev. D, 31-Mar-08
Typical
65
100
43
Maximum
83
120
52
Unit
°C/W
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