SI6466ADQ Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) MOSFET

Si6466ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.04
3000
Capacitance
0.03
0.02
0.01
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 8.1 A
4
3
2
1
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
10
T_J = 150_C
2400
C_iss
1800
1200
C_oss
600
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 8.1 A
1.4
1.2
1.0
0.8
0.6
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
I_D = 8.1 A
T_J = 25_C
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71182
S-31725—Rev. B, 18-Aug-03
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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