SI6466ADQ Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) MOSFET

N-Channel 2.5-V (G-S) MOSFET
Si6466ADQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.014 @ V_GS = 4.5 V
20
0.020 @ V_GS = 2.5 V
I_D (A)
8.1
6.6
FEATURES
D TrenchFETr Power MOSFET
D 100% R_g Tested
TSSOP-8
D 1_D
S2
S3
G4
8D
7S
6S
5D
Top View
Ordering Information: Si6466ADQ-T1
D
* Source Pins 2, 3, 6 and 7
G
must be tied common.
S*
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"8
8.1
6.8
6.6
5.4
30
1.35
0.95
1.5
1.05
1.0
0.67
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71182
S-31725—Rev. B, 18-Aug-03
Symbol
R_thJA
R_thJF
Typical
65
100
43
Maximum
83
120
52
Unit
_C/W
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