SI6443DQ Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si6443DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.025
On-Resistance vs. Drain Current
5000
Capacitance
0.020
0.015
0.010
V_GS = 4.5 V
V_GS = 10 V
0.005
0.000
0
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 8.8 A
8
4000
C_iss
3000
2000
1000
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 8.8 A
1.4
6
1.2
4
1.0
2
0.8
0
0
14
28
42
56
70
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
1
T_J = 25_C
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.080
0.064
0.048
I_D = 8.8 A
0.032
0.016
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72083
S-22385—Rev. A, 30-Dec-02
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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