SI6443DQ Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si6443DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = -250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = -24 V, V_GS = 0 V
V_DS = -24 V, V_GS = 0 V, T_J = 55_C
V_DS -5 V, V_GS = -10 V
V_GS = -10 V, I_D = -8.8 A
V_GS = -4.5 V, I_D = -7.2 A
V_DS = -15 V, I_D = -8.8 A
I_S = -1.5 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = -15 V, V_GS = -5 V, I_D = -8.8 A
V_DD = -15 V, R_L = 15 W
I_D ^ -1 A, V_GEN = -10 V, R_G = 6 W
I_F = -1.5 A, di/dt = 100 A/ms
Min Typ Max Unit
-1
-3
V
"100
nA
-1
mA
-10
-20
A
0.0095
0.012
W
0.0145
0.019
30
S
-0.71
-1.1
V
38
60
9.3
nC
17.7
25
40
21
35
115
180
ns
68
110
65
100
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V_GS = 10 thru 4 V
24
18
12
3V
6
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
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2
Transfer Characteristics
30
24
18
12
6
0
0.0
T_C = 125_C
25_C
-55 _C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS - Gate-to-Source Voltage (V)
Document Number: 72083
S-22385—Rev. A, 30-Dec-02