SI6441DQ Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si6441DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.025
On-Resistance vs. Drain Current
3500
Capacitance
0.020
0.015
0.010
V_GS = 4.5 V
V_GS = 10 V
0.005
0.000
0
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
6
V_DS = 15 V
5
I_D = 8 A
4
3
2
1
0
0
7
14
21
28
35
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
T_J = 150_C
10
2800
C_iss
2100
1400
C_oss
700
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 8 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.080
0.064
0.048
I_D = 8 A
0.032
1
T_J = 25_C
0.016
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72213
S-03984—Rev. A, 19-May-03
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
www.vishay.com
3