SI6441DQ Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
P-Channel 30-V (D-S) MOSFET
Si6441DQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.015 @ V_GS = - 10 V
- 30
0.024 @ V_GS = - 4.5 V
I_D (A)
-8
- 6.4
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Battery Switch
D Load Switch
S*
TSSOP-8
D 1_D
S2
Si6441DQ
S3
G4
8D
7S
6S
5D
Top View
Ordering Information: Si6441DQ-T1
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
- 30
"20
-8
- 6.3
- 6.4
- 5.0
- 30
- 1.6
- 01.0
1.75
1.08
1.14
0.69
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72213
S-03984—Rev. A, 19-May-03
Symbol
R_thJA
R_thJF
Typical
55
95
38
Maximum
70
115
50
Unit
_C/W
www.vishay.com
1