SI5481DU Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
20
10
V_GS = 5 V thru 2 V
16
8
Si5481DU
Vishay Siliconix
12
1.5 V
8
4
0
0.0
0.08
1V
0.4
0.8
1.2
1.6
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
6
4
2
0
0.0
2500
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.06
0.04
V_GS = 1.8 V
V_GS = 2.5 V
0.02
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
I_D = 9.7 A
6
4
V_DS = 10 V
V_DS = 16 V
2
2000
C_iss
1500
1000
500
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 6.5 A
1.4
V_GS = 4.5 V, 2.5 V, 1.8 V
1.2
1.0
0.8
0
0
5
10 15 20 25 30 35
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73777
S-81448-Rev. C, 23-Jun-08
www.vishay.com
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