SI5476DU_08 Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
5
V_GS = 10 thru 4 V
20
4
Si5476DU
Vishay Siliconix
T_C = - 55 °C
15
3
10
2
T_C = 125 °C
5
V_GS = 3 V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.040
1
T_C = 25 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1500
0.036
0.032
0.028
V_GS = 4.5 V
V_GS = 10 V
0.024
0
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 4.6 A
8
6
V_DS = 30 V
V_DS = 48 V
4
2
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 73663
S-81448-Rev. B, 23-Jun-08
1200
C_iss
900
600
300
C_oss
0 ^Crss
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
1.8
V_GS = 10 V
I_D = 4.6 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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