SI5443DC Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

Si5443DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
1500
Capacitance
0.16
0.12
V_GS = 2.5 V
0.08
0.04
V_GS = 3.6 V
V_GS = 4.5 V
0.00
0
3
6
9
12
15
I_D -- Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 3.6 A
4
1200
C_iss
900
600
300
C_oss
C_rss
0
0
4
8
12
16
20
V_DS -- Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 3.6 A
1.4
3
1.2
2
1.0
1
0.8
0
0
2
4
6
8
10
Q_g -- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
0.6
--50 --25 0
25 50 75 100 125 150
T_J -- Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.15
I_D = 3.6 A
0.10
T_J = 25_C
0.05
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD -- Source-to-Drain Voltage (V)
Document Number: 71064
S-21251—Rev. C, 05-Aug-02
0.00
0
1
2
3
4
5
V_GS -- Gate-to-Source Voltage (V)
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