SI5442DU Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
V_GS = 5 V thru 2 V
50
V_GS = 1.5 V
40
30
20
10
0
0.0
V_GS = 1 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
20
16
12
8
4
0
0.0
0.014
2500
Si5442DU
Vishay Siliconix
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.012
0.010
0.008
0.006
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
0.004
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
I_D = 15 A
6
V_DS = 10 V
V_DS = 5 V
4
V_DS = 16 V
2
2000
C_iss
1500
1000
500
C_rss
C_oss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 8 A
1.4
V_GS = 4.5 V, 2.5 V
1.2
V_GS = 1.8 V
1.0
0.8
0
0
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63233
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S13-2149-Rev. B, 14-Oct-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000