SI5429DU Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
10
V_GS = 10 V thru 5 V
V_GS = 4 V
40
8
Si5429DU
Vishay Siliconix
30
6
20
4
T_C = 25 °C
10
V_GS = 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
V_GS = 4.5 V
V_GS = 10 V
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
2
T_C = 125 °C
T_C = - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3000
C_iss
2400
1800
1200
600
C_oss
C_rss
0
0
3
6
9
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
1.6
8
I_D = 12 A
1.4
V_DS = 15 V
6
1.2
V_DS = 7.5 V
V_DS = 24 V
4
1.0
V_GS = 10 V
V_GS = 4.5 V
2
0.8
0
0
9
18
27
36
45
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0 25 50 75 100
T_J - Junction Temperature (°C)
125 150
On-Resistance vs. Junction Temperature
Document Number: 63933
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S12-0804-Rev. A, 16-Apr-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000