SI5402BDC_11 Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si5402BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
800
700
0.04
V_GS = 4.5 V
600
0.03
500
400
0.02
V_GS = 10 V
300
200
0.01
100
0.00
0
0
4
8
12
16
20
0
I_D - Drain Current (A)
On-Resistance vs. Drain Current
C_iss
C_oss
C_rss
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 4.9 A
8
6
V_DS = 15 V
1.6
I_D = 4.9 A
1.4
1.2
V_GS = 10 V
4
1.0
2
0.8
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
20
T_J = 150 °C
10
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
0.08
I_D = 4.9 A
0.06
0.04
T_J = 25 °C
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73051
S-83054-Rev. B, 29-Dec-08
www.vishay.com
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