SI5402BDC_11 Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
Si5402BDC
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.035 at V_GS = 10 V
0.042 at V_GS = 4.5 V
I_D (A)
6.7
6.1
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
1206-8 ChipFET^®
1
D
D
D
D
D
D
G
S
Bottom View
Marking Code
AD XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si5402BDC-T1-E3 (Lead (Pb)-free)
Si5402BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted´
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 85 °C
I_D
6.7
4.9
4.8
3.5
Pulsed Drain Current
I_DM
20
Continuous Source Current (Diode Conduction)^a
I_S
2.1
1.1
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
2.5
1.3
1.3
0.7
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
Soldering Recommendations (Peak Temperature)^{b, c}
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t≤5s
45
Steady State
R_thJA
80
Steady State
R_thJF
18
50
95
°C/W
22
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73051
S-83054-Rev. B, 29-Dec-08
www.vishay.com
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