SI4953ADY Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

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Si4953ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
1500
Capacitance
0.15
0.10
V_GS = 4.5 V
0.05
V_GS = 10 V
0
0
6
12
18
24
30
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 4.9 A
8
1200
C_iss
900
600
C_oss
300
C_rss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 4.9 A
1.4
6
1.2
4
1.0
2
0.8
0
0
4
8
12
16
20
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
T_J = 25_C
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Document Number: 71091
S-015393—Rev. B, 17-Jul-00
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.40
0.35
0.30
0.25
I_D = 4.9 A
0.20
0.15
0.10
0.05
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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