SI4953ADY Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

Si4953ADY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = –30 V, V_GS = 0 V
V_DS = –30 V, V_GS = 0 V, T_J = 55_C
V_DS = –5 V, V_GS = –10 V
V_GS = –10 V, I_D = –4.9 A
V_GS = –4.5 V, I_D = –3.7 A
V_DS = –10 V, I_D = –4.9 A
I_S = –1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = –15 V, V_GS = –10 V, I_D = –4.9 A
V_DD = –15 V, R_L = 15 W
I_D ^ –1 A, V_GEN = –10 V, R_G = 6 W
I_F = –1.7 A, di/dt = 100 A/ms
Min
Typ
Max Unit
–1
V
"100
nA
–1
mA
–25
–30
A
0.045
0.053
W
0.075
0.090
9
S
–0.8
–1.2
V
15
25
4
nC
2
7
15
10
20
40
80
ns
20
40
30
60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V_GS = 10 thru 7 V
24
6V
5V
18
12
4V
6
3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS – Drain-to-Source Voltage (V)
Transfer Characteristics
30
T_C = –55_C
24
25_C
18
125_C
12
6
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 71091
S-015393—Rev. B, 17-Jul-00