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SI4947DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) Rated MOSFET | |||
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Si4947DY
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
20
Transfer Characteristics
20
VGS = 10, 9, 8, 7, 6 V
16
TC = â55_C
16
25_C
5V
12
125_C
12
8
4V
4
3V
0
0
2
4
6
8
VDS â Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.40
0.32
0.24
VGS = 4.5 V
0.16
VGS = 10 V
0.08
0
0
3
6
9
12
15
ID â Drain Current (A)
Gate Charge
10
VDS = 10 V
ID = 2.5 A
8
6
4
2
0
0
2
4
6
8
10
Qg â Total Gate Charge (nC)
Siliconix
S-49520âRev. C, 18-Dec-96
8
4
0
0
2
4
6
8
VGS â Gate-to-Source Voltage (V)
Capacitance
700
600
Ciss
500
400
300
Coss
200
100
Crss
0
0
6
12
18
24
30
VDS â Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
1.8
VGS = 10 V
ID = 2.5 A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
â50 â25 0 25 50 75 100 125 150
TJ â Junction Temperature (_C)
3
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