SI4947DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) Rated MOSFET

Si4947DY
Specifications (T_J = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = –30 V, V_GS = 0 V
V_DS = –30 V, V_GS = 0 V, T_J = 55_C
V_DS w –5 V, V_GS = –10 V
V_GS = –10 V, I_D = 2.5 A
V_GS = –4.5 V, I_D = 1.8 A
V_DS = –15 V, I_D = –2.5 A
I_S = –1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = –10 V, V_GS = –10 V, I_D = –2.5 A
V_DD = –10 V, R_L = 10 W
I_D ^ –1 A, V_GEN = –10 V, R_G = 6 W
I_F = –1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0
V
"100
nA
–1
mA
–25
–15
A
0.066 0.085
W
0.125
0.19
5.0
S
–0.8
–1.2
V
8.7
15
1.9
nC
1.3
7
15
9
18
14
27
ns
8
15
50
80
2
Siliconix
S-49520—Rev. C, 18-Dec-96