SI4947ADY Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

Si4947ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.30
1000
Capacitance
0.24
0.18
0.12
V_GS = 4.5 V
0.06
V_GS = 10 V
0.00
0
3
6
9
12
15
I_D - Drain Current (A)
Gate Charge
10
V_DS = 10 V
I_D = 3.9 A
8
6
4
2
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
800
C_iss
600
400
C_oss
200
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 3.9 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.40
0.32
0.24
I_D = 3.9 A
T_J = 25_C
0.16
0.08
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Document Number: 71101
S-31989—Rev. C, 13-Oct-03
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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