SI4947ADY Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

Si4947ADY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.080 @ V_GS = - 10 V
- 30
0.135 @ V_GS = - 4.5 V
I_D (A)
- 3.9
- 3.0
SO-8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4947ADY
Si4947ADY-T1 (with Tape and Reel)
S₁
G₁
D₁
P-Channel MOSFET
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V_GS
"20
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
- 3.9
- 3.0
- 3.1
- 2.4
- 20
- 1.7
- 1.0
2.0
1.2
1.3
0.76
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71101
S-31989—Rev. C, 13-Oct-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
54
87
34
Maximum
62.5
105
45
Unit
_C/W
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