SI4944DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

New Product
Si4944DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
On-Resistance vs. Drain Current
2400
0.024
1800
Capacitance
C_iss
0.018
0.012
0.006
V_GS = 4.5 V
V_GS = 10 V
1200
600
C_rss
C_oss
0.000
0
6
12
18
24
30
I_D − Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 12.2 A
8
0
0
6
12
18
24
30
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 12.2 A
1.4
6
1.2
4
1.0
2
0.8
0
0
5
10
15
20
25
30
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
T_J = 25_C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
Document Number: 72512
S-32131—Rev. A, 27-Oct-03
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
0.04
0.03
I_D = 3 A
I_D = 12.2 A
0.02
0.01
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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