SI4944DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

New Product
Si4944DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.0095 @ V_GS = 10 V
0.016 @ V_GS = 4.5 V
I_D (A)
12.2
9.4
FEATURES
D TrenchFETr Power MOSFET
D 100% R_g Tested
APPLICATIONS
D DC/DC Conversion
D Load Switching
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Ordering Information: Si4944DY
Si4944DY-T1 (with Tape and Reel)
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
12.2
9.3
8.8
6.7
30
1.9
1.1
2.3
1.3
1.2
0.7
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72512
S-32131—Rev. A, 27-Oct-03
Symbol
R_thJA
R_thJF
Typical
42
75
19
Maximum
55
95
25
Unit
_C/W
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