SI4936BDY Datasheet, PDF (3/10 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
10
V_GS = 10 V thru 5 V
24
8
Si4936BDY
Vishay Siliconix
18
12
4V
6
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.08
0.07
0.06
0.05
V_GS = 4.5 V
0.04
0.03
V_GS = 10 V
0.02
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 5.9 A
8
6
V_DS = 15 V
4
V_DS = 24 V
2
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
6
T_C = - 55 °C
4
T_C = 125 °C
2
T_C = 25 C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
800
600
C_iss
400
200
C_oss
0 ^Crss
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
1.6 ID = 5.9 A
1.5
V_GS = 10 V
1.4
1.3
V_GS = 4.5 V
1.2
1.1
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74469
S09-0767-Rev. B, 04-May-09
www.vishay.com
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