SI4936BDY Datasheet, PDF (1/10 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET
Si4936BDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.035 at V_GS = 10 V
30
0.051 at V_GS = 4.5 V
I_D (A)
6.9
5.7
Q_g (Typ.)
4.5 nC
SO-8
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Low Current DC/DC Conversion
• Notebook System Power
S₁ 1
G₁ 2
S₂ 3
G_{2 4}
Top View
8 D1
7 ^D1
6 D2
5 ^D2
D₁
D₂
G₁
G₂
Ordering Information: Si4936BDY-T1-E3 (Lead (Pb)-free)
Si4936BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
30
± 20
6.9
5.5
5.9^{a, b}
4.7^{a, b}
30
2.3
1.7^{a, b}
2.8
1.8
2^{a, b}
1.3^{a, b}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
58
38
Maximum
62.5
45
Unit
V
A
W
°C
Unit
°C/W
Document Number: 74469
S09-0767-Rev. B, 04-May-09
www.vishay.com
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