SI4920DY-T1 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si4920DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
V_GS = 10 V thru 5 V
32
4V
30
24
16
8
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
20
T_C = 125 °C
10
25 °C
- 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.05
3000
0.04
0.03
V_GS = 4.5 V
0.02
0.01
V_GS = 10 V
0
0
10
20
30
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
I_D = 6.9 A
8
2500
C_iss
2000
1500
1000
C_oss
500
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
I_D = 6.9 A
1.4
6
1.2
4
1.0
2
0.8
0
0
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 70667
S09-0767-Rev. E, 04-May-09
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction T emperature (°C)
On-Resistance vs. Junction Temperature
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