SI4920DY-T1 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET
Si4920DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.025 at V_GS = 10 V
0.035 at V_GS = 4.5 V
I_D (A)
± 6.9
± 5.8
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4920DY-T1-E3 (Lead (Pb)-free)
Si4920DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
± 6.9
± 5.5
A
Pulsed Drain Current (10 µs Pulse Width)
I_DM
± 40
Continuous Source Current (Diode Conduction)^a
I_S
1.7
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
2
1.3
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol
R_thJA
Limit
62.5
Unit
°C/W
Document Number: 70667
S09-0767-Rev. E, 04-May-09
www.vishay.com
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