SI4909DY-T1-GE3 Datasheet, PDF (3/10 Pages) Vishay Siliconix – Dual P-Channel 40 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
10
32
V_GS = 10 V thru 4 V
8
Si4909DY
Vishay Siliconix
24
6
16
8
0
0.0
0.035
V_GS = 3 V
V_GS = 2 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
4
T_C = 25 °C
2
T_C = 125 °C
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3100
0.031
0.027
V_GS = 4.5 V
2480
C_iss
1860
0.023
0.019
V_GS = 10 V
0.015
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
V_DS = 20 V
6
V_DS = 10 V
V_DS = 30 V
4
2
0
0
9
18
27
36
45
Q_g - Total Gate Charge (nC)
Gate Charge
1240
620
C_oss
C_rss
0
0
8
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 8 A
1.6
1.4
1.2
V_GS = 10 V
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67077
S10-2603-Rev. A, 15-Nov-10
www.vishay.com
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