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| SI4909DY-T1-GE3 Datasheet, PDF (1/10 Pages) Vishay Siliconix – Dual P-Channel 40 V (D-S) MOSFET | |||
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New Product
Dual P-Channel 40 V (D-S) MOSFET
Si4909DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (ï)
- 40
0.027 at VGS = - 10 V
0.034 at VGS = - 4.5 V
ID (A)d
-8
- 7.2
Qg (Typ.)
21.7 nC
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
⢠100 % UIS Tested
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
S1
S2
⢠Load Switches
- Notebook PCs
- Desktop PCs
G1
G2
Top View
Ordering Information: Si4909DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
D1
D2
P-Channel MOSFET P-Channel MOSFET
Limit
- 40
± 20
- 8.0
- 6.5
- 6.4a, b
- 5.1a, b
- 30e
- 2.6
- 1.6a, b
- 20
20
3.2
2.1
2.0a, b
1.28a, b
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 110 °C/W.
d. Based on TC = 25 °C.
e. Limited by package.
t ï£ï 10 s
Steady State
Document Number: 67077
S10-2603-Rev. A, 15-Nov-10
Symbol
RthJA
RthJF
Typical
47
29
Maximum
62.5
38
Unit
°C/W
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