SI4886DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

New Product
Si4886DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
On-Resistance vs. Drain Current
2500
Capacitance
0.015
0.010
0.005
V_GS = 4.5 V
V_GS = 10 V
0
0
10
20
30
40
50
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
8
I_D = 13 A
6
4
2
0
0
5
10
15
20
25
30
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
2000
C_iss
1500
1000
C_oss
500
C_rss
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 10 V
I_D = 13 A
1.4
1.2
1.0
0.8
0.6
0.4
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
10
T_J = 150_C
0.03
0.02
T_J = 25_C
0.01
I_D = 13 A
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71142
S-00206—Rev. A, 21-Feb-00
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
www.vishay.com S FaxBack 408-970-5600
2-3