SI4886DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

New Product
Si4886DY
Vishay Siliconix
N-Channel Reduced Q_g, Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.010 @ V_GS = 10 V
0.0135 @ V_GS = 4.5 V
I_D (A)
13
11
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
DD DD
G
N-Channel MOSFET
S
SS
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
13
9.5
10.5
7.6
"50
2.60
1.40
2.95
1.56
1.90
1.0
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71142
S-00206—Rev. A, 21-Feb-00
Symbol
R_thJA
R_thJF
Typical
35
68
18
Maximum
42
80
23
Unit
_C/W
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