SI4886DY-T1-E3 Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020
2500
Si4886DY
Vishay Siliconix
0.015
0.010
0.005
V_GS = 4.5 V
V_GS = 10 V
0
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
8
I_D = 13 A
6
4
2
0
0
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Gate Charge
50
2000
C_iss
1500
1000
500
C_rss
0
0
5
C_oss
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
V_GS = 10 V
I_D = 13 A
1.4
1.2
1.0
0.8
0.6
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
0.04
10
T_J = 150 °C
0.03
T_J = 25 °C
0.02
0.01
I_D = 13 A
1
0
0.2 0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71142
S09-0869-Rev. B, 18-May-09
www.vishay.com
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