SI4886DY-T1-E3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

Si4886DY
Vishay Siliconix
N-Channel Reduced Q_g, Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.010 at V_GS = 10 V
0.0135 at V_GS = 4.5 V
I_D (A)
13
11
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs
• High-Efficiency PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4886DY-T1-E3 (Lead (Pb)-free)
Si4886DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
13
9.5
10.5
7.6
A
I_DM
± 50
Continuous Source Current (Diode Conduction)^a
I_S
2.60
1.40
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
2.95
1.56
1.90
1.0
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
35
68
18
Maximum
42
80
23
Unit
°C/W
Document Number: 71142
S09-0869-Rev. B, 18-May-09
www.vishay.com
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