SI4872DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

New Product
Si4872DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.015
On-Resistance vs. Drain Current
4000
Capacitance
0.012
0.009
0.006
V_GS = 4.5 V
V_GS = 10 V
3200
C_iss
2400
1600
C_oss
0.003
800
C_rss
0
0
10
20
30
40
50
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
8
I_D = 15 A
6
4
2
0
0
12
24
36
48
60
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
T_J = 150_C
10
T_J = 25_C
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 10 V
I_D = 15 A
1.4
1.2
1.0
0.8
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
I_D = 15 A
0.02
0.01
1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71248
S-01552—Rev. A, 17-Jul-00
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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