SI4872DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

New Product
Si4872DY
Vishay Siliconix
N-Channel Reduced Q_g, Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.0075 @ V_GS = 10 V
0.010 @ V_GS = 4.5 V
I_D (A)
15
13
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
DD DD
G
N-Channel MOSFET
S
SS
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
15
11.0
13
9.0
50
2.7
1.40
3.10
1.56
2
1.0
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board.
Document Number: 71248
S-01552—Rev. A, 17-Jul-00
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
33
68
16
Maximum
40
80
21
Unit
_C/W
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