SI4842BDY Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si4842BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
1.2
V_GS = 10 V thru 4 V
50
1.0
40
0.8
30
0.6
20
10
0
0.0
0.006
3V
0.3
0.6
0.9
1.2
1.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.005
V_GS = 4.5 V
0.4
25 °C
0.2
T_C = 125 °C
- 55 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
4500
C_iss
3600
2700
0.004
V_GS = 10 V
0.003
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 25 A
8
V_DS = 10 V
6
V_DS = 15 V
4
V_DS = 20 V
2
1800
C_oss
900
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 20 A
1.4
V_GS = 4.5 V
1.2
V_GS = 10 V
1.0
0.8
0
0
14
28
42
56
70
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73532
S09-0228-Rev. C, 09-Feb-09
www.vishay.com
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