SI4842BDY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
Si4842BDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0042 at V_GS = 10 V
30
0.0057 at V_GS = 4.5 V
I_D (A)^a
28
24
Q_g (Typ.)
29 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFETs
• 100 % R_g Tested
S1
S2
S3
G4
SO-8
8^D
7D
6D
5D
Top View
Ordering Information: Si4842BDY-T1-E3 (Lead (Pb)-free)
Si4842BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
28
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
23
20^{b, c}
Pulsed Drain Current
T_A = 70 °C
16^{b, c}
A
I_DM
60
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
5.6
2.7^{b, c}
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
35
Avalanche Energy
E_AS
61
mJ
T_C = 25 °C
6.25
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
4.0
3.0^{b, c}
W
T_A = 70 °C
1.9^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
Symbol
R_thJA
R_thJF
Document Number: 73532
S09-0228-Rev. C, 09-Feb-09
Typical
32
15
Maximum
42
20
Unit
°C/W
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