SI4836DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

New Product
Si4836DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.006
On-Resistance vs. Drain Current
8000
Capacitance
0.005
0.004
0.003
0.002
0.001
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
6400
4800
3200
1600
C_iss
C_rss
C_oss
0.000
0
10
20
30
40
50
60
I_D - Drain Current (A)
Gate Charge
6
5
V_DS = 6 V
I_D = 25 A
4
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 4.5 V
I_D = 25 A
1.4
3
1.2
2
1.0
1
0.8
0
0
14
28
42
56
70
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
60
0.6
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.015
T_J = 150_C
10
T_J = 25_C
0.012
0.009
0.006
0.003
I_D = 25 A
1
0.00
0.2
0.4
0.6
0.8 1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71692
S-03662—Rev. D, 14-Apr-03
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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