SI4836DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

Si4836DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = 9.6 V, V_GS = 0 V
V_DS = 9.6 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 25 A
V_GS = 2.5 V, I_D = 22 A
V_GS = 1.8 V, I_D = 19 A
V_DS = 6 V, I_D = 25 A
I_S = 2.9 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_G
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 6 V, V_GS = 4.5 V, I_D = 25 A
V_DD = 6 V, R_L = 6 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 2.9 A, di/dt = 100 A/ms
Min Typ Max Unit
0.40
V
"100
nA
1
mA
5
30
A
0.0025 0.003
0.0031 0.004
W
0.004
0.005
80
S
0.56
1.1
V
51
75
6.6
nC
9.1
1.0
1.6
2.7
W
35
55
41
65
190
290
ns
115
175
60
90
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
V_GS = 5 thru 1.5 V
50
40
30
20
10
1V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
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2
Transfer Characteristics
60
50
40
30
20
T_C = 125_C
25_C
10
- 55_C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_GS - Gate-to-Source Voltage (V)
Document Number: 71692
S-03662—Rev. D, 14-Apr-03