SI4835BDY_05 Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4835BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
3200
Capacitance
0.04
0.03
0.02
V_GS = 4.5 V
0.01
V_GS = 10 V
0.00
0
10
20
30
40
50
I_D − Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 9.6 A
8
2400
C_iss
1600
800
C_rss
C_oss
0
0
6
12
18
24
30
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 9.6 A
1.4
6
1.2
4
1.0
2
0.8
0
0
10
20
30
40
50
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
60
T_J = 150_C
10
T_J = 25_C
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
I_D = 9.6 A
0.03
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 72029
S-41912—Rev. D, 25-Oct-04
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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