SI4835BDY_05 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si4835BDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.018 @ V_GS = −10 V
−30
0.030 @ V_GS = −4.5 V
I_D (A)
−9.6
−7.5
Q_g (Typ)
−25
FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density Process
D 100% R_g Tested
APPLICATIONS
D Load Switches
− Notebook PCs
− Desktop PCs
SO-8
S
S1
8D
S2
7D
G
S3
6D
G4
5D
Top View
Ordering Information: Si4835BDY
Si4835BDY-T1 (with Tape and Reel)
Si4835BDY—E3 (Lead (Pb)-Free)
Si4835BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−30
"25
−9.6
−7.4
−7.7
−5.9
−50
−2.1
−1.3
2.5
1.5
1.6
0.9
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72029
S-41912—Rev. D, 25-Oct-04
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
39
70
18
Maximum
50
85
22
Unit
_C/W
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